Part Number Hot Search : 
DS3102GN 2SK3408 OM184SC LT1134 FDMS86 18R333 AD586KN AN79L05
Product Description
Full Text Search
 

To Download MRF65225D Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  lifetime buy last order 31jul04 last ship 31jan05 1 mrf65225r1 motorola rf device data the rf submicron mosfet line      nchannel enhancementmode lateral mosfet designed for class a and class ab common source, linear power amplifiers in the 960 mhz range. the mrf65225r1 has been specifically designed for use in communications network (gsm) base stations. the package offers the advantage of smd. ? specified 26 volts, 960 mhz, class ab characteristics output power = 5.0 watts cw power gain = 17 db min @ 960 mhz, 5.0 watts cw efficiency = 50% min @ 960 mhz, 5.0 watts cw ? excellent thermal stability ? characterized with series equivalent largesignal impedance parameters ? sparameter characterization at high bias levels ? bottom side source eliminates dc isolators, reducing common mode inductances ? available in tape and reel. r1 suffix = 500 units per 12 mm, 7 inch reel. maximum ratings rating symbol value unit drainsource voltage v dss 65 vdc gatesource voltage v gs 20 vdc total device dissipation @ t c = 25 c derate above 25 c p d 11.7 0.067 watts w/ c storage temperature range t stg 65 to +150 c operating junction temperature t j 200 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case (1) r q jc 6.86 c/w electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drainsource breakdown voltage (v gs = 0 vdc, i d = 0.2 ma) v (br)dss 65 e e vdc zero gate voltage drain current (v ds = 26 vdc, v gs = 0) i dss e e 1.0 m adc gatesource leakage current (v gs = 20 vdc, v ds = 0) i gss e e 1.0 m adc (1) thermal resistance is determined under specified rf operating condition. note caution mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. order this document by mrf65225/d  
 semiconductor technical data   960 mhz, 5.0 w, 26 v lateral nchannel rf power mosfet case 458c02, style 1 ? motorola, inc. 2000 g d s rev 1
lifetime buy last order 31jul04 last ship 31jan05 mrf65225r1 2 motorola rf device data electrical characteristics continued (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit on characteristics gate threshold voltage (v ds = 10 v, i d = 20 m a) v gs(th) 1.25 3.0 4.0 vdc gate quiescent voltage (v ds = 26 vdc, i d = 50 ma) v gs(q) 2.25 4.0 5.0 vdc drainsource onvoltage (v gs = 10 v, i d = 0.25 a) v ds(on) e e 0.7 vdc dynamic characteristics input capacitance (v ds = 26 v, v gs = 0 v, f = 1.0 mhz) c iss e 6.0 e pf output capacitance (v ds = 26 v, v gs = 0 v, f = 1.0 mhz) c oss e 3.7 e pf reverse transfer capacitance (v ds = 26 v, v gs = 0 v, f = 1.0 mhz) c rss e 0.3 e pf functional tests (in motorola test fixture) commonsource power gain (v ds = 26 v, p out = 5.0 w cw, i dq = 50 ma, f = 960 mhz) g ps 17 19 e db drain efficiency (v ds = 26 v, p out = 5.0 w cw, i dq = 50 ma, f = 960 mhz) h 50 55 e % input return loss (v ds = 26 v, p out = 5.0 w cw, i dq = 50 ma, f = 960 mhz) irl e e 9 db
lifetime buy last order 31jul04 last ship 31jan05 3 mrf65225r1 motorola rf device data p out , output power (watts) cw figure 1. power gain versus output power figure 2. output power versus input power typical characteristics 25 24 23 22 21 20 15 0 1.0 2.0 3.0 4.0 5.0 6.0 p in , input power (watts) cw p out , output power (watts) 6.0 2.0 1.0 0 0 0.02 0.04 0.06 0.08 0.1 3.0 4.0 5.0 v ds = 26 vdc i dq = 50 ma f = 960 mhz v ds = 26 vdc f = 960 mhz 19 18 17 16 i dq = 100 ma i dq = 50 ma i dq = 25 ma g p , power gain (db) p out , output power (watts) cw figure 3. drain efficiency versus output power figure 4. intermodulation distortion products versus output power 70 60 50 40 30 20 0 0 1.0 2.0 3.0 4.0 5.0 6.0 p out , output power (watts) pep 10 50 60 70 0 1.0 2.0 3.0 4.0 6.0 40 30 20 v ds = 26 vdc i dq = 50 ma f = 960 mhz 10 eff, drain efficiency (%) 5.0 v ds = 26 vdc i dq = 50 ma f1 = 959.9 mhz f2 = 960.0 mhz 3rd order 5th 7th imd, intermodulation distortion (dbc)
lifetime buy last order 31jul04 last ship 31jan05 mrf65225r1 4 motorola rf device data figure 5. series equivalent input and output impedance f mhz z in ohms z ol * ohms 800 825 850 875 2.40 j17.4 2.50 j15.8 2.46 j16.4 2.56 j15.2 14.7 j22.8 14.1 j20.8 14.0 j19.5 13.9 j17.9 z in = complex conjugate of source impedance. z ol * = complex conjugate of the optimum load impedance into which the device operates at a given output power, voltage, current and frequency. 900 2.60 j14.7 13.8 j17.3 925 950 975 2.78 j13.2 2.71 j13.7 2.88 j12.6 13.7 j16.9 13.2 j15.6 12.9 j14.4 1000 3.06 j11.9 12.9 j14.2 z in f = 1000 mhz 800 z o = 50 w f = 1000 mhz 800 z ol * z in z ol * input matching network device under test output matching network
lifetime buy last order 31jul04 last ship 31jan05 5 mrf65225r1 motorola rf device data table 1. common source sparameters at v ds = 12 vdc, i d = 50 madc f s 11 s 21 s 12 s 22 f ghz |s 11 | f |s 21 | f |s 12 | f |s 22 | f 0.500 0.786 114 5.16 87 0.074 2 0.711 100 0.525 0.782 117 4.94 84 0.073 1 0.709 102 0.550 0.779 120 4.74 82 0.074 2 0.707 105 0.575 0.777 122 4.55 79 0.073 5 0.706 107 0.600 0.776 124 4.37 77 0.073 7 0.707 109 0.625 0.775 127 4.20 75 0.073 9 0.707 111 0.650 0.774 129 4.03 73 0.072 12 0.707 113 0.675 0.774 131 3.89 70 0.072 13 0.710 115 0.700 0.773 133 3.74 68 0.071 14 0.711 117 0.725 0.774 134 3.61 66 0.071 16 0.712 119 0.750 0.775 136 3.48 64 0.070 18 0.715 120 0.775 0.775 138 3.36 63 0.069 20 0.717 122 0.800 0.776 139 3.25 61 0.069 21 0.720 124 0.825 0.777 141 3.14 59 0.068 23 0.723 125 0.850 0.778 143 3.03 57 0.067 25 0.728 128 0.875 0.779 144 2.93 55 0.067 26 0.730 129 0.900 0.780 146 2.84 53 0.066 28 0.733 130 0.925 0.781 147 2.75 51 0.064 29 0.737 132 0.950 0.783 149 2.66 50 0.065 30 0.740 133 0.975 0.785 150 2.58 48 0.063 32 0.742 134 1.000 0.786 151 2.51 47 0.063 33 0.745 136 table 2. common source sparameters at v ds = 12 vdc, i d = 100 madc f s 11 s 21 s 12 s 22 f ghz |s 11 | f |s 21 | f |s 12 | f |s 22 | f 0.500 0.757 122 6.36 86 0.066 2 0.652 107 0.525 0.754 124 6.09 84 0.065 1 0.650 109 0.550 0.752 127 5.84 81 0.065 3 0.649 111 0.575 0.750 129 5.60 79 0.065 5 0.648 113 0.600 0.749 131 5.37 77 0.065 7 0.649 115 0.625 0.748 133 5.16 75 0.065 8 0.650 117 0.650 0.747 135 4.96 73 0.065 10 0.651 119 0.675 0.747 137 4.78 71 0.064 12 0.654 121 0.700 0.746 139 4.60 69 0.064 14 0.655 123 0.725 0.747 140 4.43 67 0.062 15 0.658 124 0.750 0.747 142 4.28 65 0.062 17 0.660 126 0.775 0.748 144 4.13 63 0.062 18 0.663 127 0.800 0.748 145 3.99 61 0.062 20 0.667 129 0.825 0.749 147 3.86 60 0.061 21 0.670 130 0.850 0.751 148 3.73 58 0.060 22 0.674 132 0.875 0.751 150 3.61 56 0.060 25 0.679 134 0.900 0.752 151 3.50 54 0.059 25 0.681 135 0.925 0.755 152 3.39 53 0.058 27 0.686 136 0.950 0.756 154 3.29 51 0.058 28 0.689 137 0.975 0.757 155 3.19 50 0.056 29 0.692 139 1.000 0.760 156 3.10 48 0.056 30 0.695 140
lifetime buy last order 31jul04 last ship 31jan05 mrf65225r1 6 motorola rf device data table 3. common source sparameters at v ds = 12 vdc, i d = 200 madc f s 11 s 21 s 12 s 22 f ghz |s 11 | f |s 21 | f |s 12 | f |s 22 | f 0.500 0.743 128 7.18 85 0.059 1 0.607 113 0.525 0.740 130 6.87 83 0.059 1 0.607 115 0.550 0.739 132 6.58 81 0.060 3 0.608 117 0.575 0.736 134 6.30 79 0.059 4 0.608 119 0.600 0.735 137 6.05 76 0.059 7 0.610 121 0.625 0.735 138 5.81 74 0.059 8 0.610 123 0.650 0.734 140 5.58 72 0.059 10 0.612 124 0.675 0.734 142 5.38 71 0.058 11 0.615 126 0.700 0.733 144 5.18 69 0.057 12 0.616 128 0.725 0.733 145 4.99 67 0.057 14 0.620 129 0.750 0.734 147 4.82 65 0.057 16 0.622 130 0.775 0.735 148 4.66 64 0.056 17 0.626 132 0.800 0.735 150 4.50 62 0.056 18 0.630 133 0.825 0.736 151 4.35 60 0.055 19 0.633 135 0.850 0.737 153 4.21 58 0.054 21 0.638 136 0.875 0.739 154 4.07 57 0.054 22 0.642 138 0.900 0.739 155 3.95 55 0.053 24 0.645 139 0.925 0.741 156 3.83 53 0.053 25 0.649 140 0.950 0.742 158 3.71 52 0.053 26 0.653 141 0.975 0.744 159 3.61 51 0.052 27 0.656 142 1.000 0.746 160 3.51 49 0.051 28 0.661 143 table 4. common source sparameters at v ds = 26 vdc, i d = 50 madc f s 11 s 21 s 12 s 22 f ghz |s 11 | f |s 21 | f |s 12 | f |s 22 | f 0.500 0.847 109 6.45 93 0.047 10 0.729 80 0.525 0.844 112 6.20 90 0.047 7 0.726 83 0.550 0.841 114 5.98 88 0.046 5 0.724 85 0.575 0.838 117 5.75 85 0.047 2 0.722 88 0.600 0.836 119 5.54 83 0.047 1 0.721 90 0.625 0.834 122 5.36 80 0.047 2 0.720 92 0.650 0.831 124 5.16 78 0.047 4 0.721 94 0.675 0.831 126 4.98 76 0.046 6 0.722 96 0.700 0.829 128 4.81 73 0.045 8 0.721 98 0.725 0.827 130 4.64 71 0.045 10 0.724 100 0.750 0.828 132 4.49 69 0.045 11 0.725 102 0.775 0.827 134 4.35 67 0.045 12 0.727 104 0.800 0.826 136 4.21 65 0.044 15 0.730 106 0.825 0.826 138 4.08 63 0.043 16 0.731 107 0.850 0.826 140 3.94 61 0.043 18 0.734 110 0.875 0.826 141 3.82 59 0.042 19 0.738 111 0.900 0.826 143 3.71 57 0.042 19 0.740 113 0.925 0.827 145 3.59 55 0.041 22 0.743 115 0.950 0.827 146 3.49 54 0.041 24 0.745 116 0.975 0.828 148 3.39 52 0.040 25 0.747 117 1.000 0.828 149 3.30 50 0.039 26 0.751 119
lifetime buy last order 31jul04 last ship 31jan05 7 mrf65225r1 motorola rf device data table 5. common source sparameters at v ds = 26 vdc, i d = 150 madc f s 11 s 21 s 12 s 22 f ghz |s 11 | f |s 21 | f |s 12 | f |s 22 | f 0.500 0.826 117 8.37 91 0.039 8 0.626 85 0.525 0.822 120 8.04 89 0.039 7 0.625 88 0.550 0.818 122 7.74 86 0.039 6 0.623 90 0.575 0.815 125 7.43 84 0.039 3 0.622 92 0.600 0.813 127 7.16 81 0.038 1 0.624 94 0.625 0.811 130 6.90 79 0.038 1 0.624 96 0.650 0.808 132 6.65 77 0.038 3 0.626 98 0.675 0.808 134 6.41 75 0.038 5 0.627 100 0.700 0.807 136 6.19 73 0.038 5 0.629 102 0.725 0.806 138 5.97 71 0.037 8 0.631 104 0.750 0.805 139 5.78 69 0.037 10 0.635 106 0.775 0.805 141 5.59 67 0.037 11 0.637 107 0.800 0.804 143 5.41 65 0.036 11 0.640 109 0.825 0.805 145 5.24 63 0.036 13 0.643 111 0.850 0.804 146 5.07 61 0.034 14 0.648 113 0.875 0.805 148 4.92 59 0.035 16 0.652 114 0.900 0.803 149 4.77 58 0.034 17 0.655 116 0.925 0.805 151 4.63 56 0.034 18 0.659 117 0.950 0.806 152 4.50 54 0.033 19 0.663 119 0.975 0.806 154 4.37 53 0.032 21 0.666 120 1.000 0.807 155 4.25 51 0.031 22 0.671 121 table 6. common source sparameters at v ds = 26 vdc, i d = 300 madc f s 11 s 21 s 12 s 22 f ghz |s 11 | f |s 21 | f |s 12 | f |s 22 | f 0.500 0.827 119 8.39 90 0.036 8 0.612 84 0.525 0.824 122 8.06 88 0.036 7 0.612 86 0.550 0.821 124 7.74 85 0.036 4 0.611 89 0.575 0.818 127 7.44 83 0.036 3 0.611 91 0.600 0.816 129 7.17 80 0.035 1 0.612 93 0.625 0.814 132 6.90 78 0.035 1 0.613 95 0.650 0.812 134 6.65 76 0.036 3 0.615 97 0.675 0.811 136 6.41 74 0.035 5 0.617 99 0.700 0.809 138 6.19 72 0.035 6 0.619 101 0.725 0.809 139 5.97 70 0.034 8 0.622 102 0.750 0.809 141 5.77 68 0.034 8 0.625 104 0.775 0.808 143 5.58 66 0.034 10 0.628 106 0.800 0.808 145 5.40 64 0.033 11 0.632 108 0.825 0.808 146 5.23 62 0.033 13 0.635 109 0.850 0.808 148 5.06 60 0.032 15 0.640 111 0.875 0.808 150 4.90 58 0.032 16 0.644 113 0.900 0.808 151 4.76 56 0.032 17 0.647 114 0.925 0.808 152 4.62 55 0.031 18 0.652 116 0.950 0.809 154 4.48 53 0.030 19 0.657 117 0.975 0.809 155 4.36 51 0.029 20 0.659 119 1.000 0.810 157 4.23 50 0.029 22 0.664 120
lifetime buy last order 31jul04 last ship 31jan05 mrf65225r1 8 motorola rf device data package dimensions case 458c02 issue c c n e b k 2x p 1 2 3 notes: 1. controlling dimensions: inches. 2. interpret dimensions and tolerances per asme y14.5m, 1994. 3. dimension h (package coplanarity): the bottom of leads and reference plane t must be coplanar within dimension h. style 1: pin 1. drain 2. gate 3. source a l r d 2x z 4x s j h dim a min max min max millimeters 0.197 0.203 5.004 5.156 inches b 0.157 0.163 3.988 4.140 c 0.085 0.110 2.159 2.794 d 0.047 0.053 1.194 1.346 e 0.004 0.010 0.102 0.254 h 0.000 0.004 0.000 0.102 j 0.004 0.010 0.102 0.254 k 0.050 0.090 1.270 2.286 l 0.177 0.183 4.496 4.648 n 0.180 0.200 4.572 5.080 p 0.140 0.160 3.556 4.064 r 0.147 0.153 3.734 3.886 z 0.020 0.508 motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, represe ntation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. atypicalo para meters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all ope rating parameters, including atypicalso must be validated for each customer application by customer's technical experts. motorola does not convey any license under it s patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical imp lant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product cou ld create a situation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expens es, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and are registered trademarks of motoro la, inc. motorola, inc. is an equal opportunity/affirmative action employer. how to reach us: usa / europe / locations not listed : motorola literature distribution; p.o. box 5405, denver, colorado 80217. 13036752140 or 18004412447 japan : motorola japan ltd.; sps, technical information center, 3201, minamiaz abu. minatoku, tokyo 1068573 japan. 8 1334403569 asia / pacific : motorola semiconductors h.k. ltd.; silicon harbour centre, 2 dai king street, tai po industrial estate, tai po, n.t., hong ko ng. 85226668334 technical information center: 18005216274 home page : http://www.motorola.com/semiconductors/ mrf65225/d ?


▲Up To Search▲   

 
Price & Availability of MRF65225D

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X